Search results for " Resist"

Measurements on partial discharge in on‐site operating power transformer: a case study

2018

This study presents the case study of a substation in-service power transformer referred to the on-site partial discharge (PD) detection and evaluation methods. An original methodology for simultaneous application of three methods is proposed: electrical, acoustic and ultra-high frequency. Transformer is powered by the power grid and no external generator is required according to the proposed methodology. Furthermore, several possibilities of applying these concurrent measurements and benefits of such solution in terms of result interpretation, interference resistance and on-site measurement applicability are indicated. The proposed methodology allows for a fast, accurate and secure PD diag…

Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device

2020

In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device’s properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4 K to 270 K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current…

Electrical transport in lead-free (Na0.5Bi0.5)1–xSrxTiO3 ceramics (x = 0, 0.01 and 0.02)

2017

Lead-free (Na0.5Bi0.5)1xSrxTiO3 (x = 0, 0.01 and 0.02) ceramics were manufactured through a solid-state mixed oxide method and their ac (σac) and dc (σdc) electric conductivity were studied. It is ...

2018

CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show CrN (1 1 1) epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture and the deposition temperature, thin films with different surface morphologies ranging from grainy rough textures to flat and smooth films were prepared. These parameters can also affect the CrN x system, with the film compound changing between semiconducting CrN and metallic Cr2N through the regulation of the nitrogen content of the gas flow and the deposition temperature at a constant deposition pressur…

Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers

2014

Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…

Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films

2019

Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…

A quartz amplifier for high-sensitivity Fourier-transform ion-cyclotron-resonance measurements with trapped ions

2019

Single-ion sensitivity is obtained in precision Penning-trap experiments devoted to light (anti)particles or ions with low mass-to-charge ratios, by adding an inductance coil to an amplifier connected to the trap, both operated at 4 K. However, single-ion sensitivity has not been reached on heavy singly or doubly charged ions. In this publication, we present a new system to reach this point, based on the use of a quartz crystal as an inductance, together with a newly developed broad-band (BB) amplifier. We detect the reduced-cyclotron frequency of 40Ca+ ions stored in a 7-tesla open-ring Penning trap. By comparing the detected electric signal obtained with the BB amplifier and the fluoresce…

Experimental and numerical investigation on a new FSW based metal to composite joining technique

2018

Abstract In the last decades, different techniques were proposed to join aluminum sheets with composites materials. Each of them has advantages and weak points over the others and new techniques and patents are continuously developed to overcome these difficulties. In this paper an experimental and numerical investigation on a new Friction Stir Welding based approach to mechanically join AA6082-T6 to self-reinforced polypropylene is presented. The aluminum sheet is pre-holed along both the sides of the weld line and a pinless tool generates the heat and pressure needed to prompt back-extrusion of the composite. New experimental fixtures and hole designs were investigated in order to enhance…

Electrical and thermomechanical properties of CVI- Si3N4 porous rice husk ash infiltrated by Al-Mg-Si alloys

2017

Abstract The effect of following processing parameters on the electrical and thermomechanical properties of Al/Si3N4 deposited silica composites was investigated using the Taguchi method and analysis of variance (ANOVA): infiltration temperature and time, atmosphere, effect of Si3N4 coating, porosity content in the preforms, and magnesium content in the alloy. The contributions of each of the parameters to modulus of elasticity, electrical resistivity, coefficient of thermal expansion (CTE), and thermal diffusivity of the resulting composites were determined. The maximum modulus of elasticity and electrical resistivity of obtained composites were 265 GPa, and 1.37 × 10−3 Ω m, respectively. …

Performance evaluation and stability of silicide-based thermoelectric modules

2020

Abstract Long-term studies on thermoelectric generators based on N-type magnesium silicide (Mg2.01Si0.49Sn0.5Sb0.01) and P-type higher manganese silicide (Mn0.98Mo0.02Si1.73Ge0.02) materials are presented, in the operating temperature range of 200 °C–400 °C. Emphasis is put on the performance and reliability of the current collector configuration, especially on the hot side of the module, and on the thermomechanical stresses that are created during operation and lifetime testing as a result of large temperature gradients experienced across the thermoelectric legs. With silver (Ag) paste as contact material, the long term-stability of the uni-couples was carried out on non-metalized legs and…